High temperature thermal management with boron nitride nanosheets

被引:55
|
作者
Wang, Yilin [1 ]
Xu, Lisha [1 ]
Yang, Zhi [2 ]
Xie, Hua [1 ]
Jiang, Puqing [3 ]
Dai, Jiaqi [1 ]
Luo, Wei [1 ]
Yao, Yonggang [1 ]
Hitz, Emily [1 ]
Yang, Ronggui [3 ]
Yang, Bao [2 ]
Hu, Liangbing [1 ]
机构
[1] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA
[2] Univ Maryland, Dept Mech Engn, College Pk, MD 20742 USA
[3] Univ Colorado, Dept Mech Engn, Boulder, CO 80309 USA
基金
美国国家科学基金会;
关键词
GRAPHENE OXIDE; SINGLE-CRYSTAL; ELECTRONIC SYSTEMS; PHONON TRANSPORT; CONDUCTIVITY; TRANSISTORS; NANOMATERIALS; FABRICATION; CHALLENGES; GENERATION;
D O I
10.1039/c7nr07058f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The rapid development of high power density devices requires more efficient heat dissipation. Recently, two-dimensional layered materials have attracted significant interest due to their superior thermal conductivity, ease of production and chemical stability. Among them, hexagonal boron nitride (h-BN) is electrically insulating, making it a promising thermal management material for next-generation electronics. In this work, we demonstrated that an h-BN thin film composed of layer-by-layer laminated h-BN nanosheets can effectively enhance the lateral heat dissipation on the substrate. We found that by using the BN-coated glass instead of bare glass as the substrate, the highest operating temperature of a reduced graphene oxide (RGO) based device could increase from 700 degrees C to 1000 degrees C, and at the same input power, the operating temperature of the RGO device is effectively decreased. The remarkable performance improvement using the BN coating originates from its anisotropic thermal conductivity: a high in-plane thermal conductivity of 14 W m(-1) K-1 for spreading and a low cross-plane thermal conductivity of 0.4 W m(-1) K-1 to avoid a hot spot right underneath the device. Our results provide an effective approach to improve the heat dissipation in integrated circuits and high power devices.
引用
收藏
页码:167 / 173
页数:7
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