Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors

被引：70
|
作者：
Koswatta, SO [1 ]
Lundstrom, MS
Anantram, MP
Nikonov, DE
机构：
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[2] NASA, Ames Res Ctr, Ctr Nanotechnol, Moffett Field, CA 94035 USA
[3] Intel Corp, Technol & Mfg Grp, Santa Clara, CA 95052 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 25期
基金：
美国国家航空航天局; 美国国家科学基金会;
关键词：
D O I：
10.1063/1.2146065
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electronic transport in a carbon nanotube metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the nonequilibrium Green's functions method with the account of electron-phonon scattering. For MOSFETs, ambipolar conduction is explained via phonon-assisted band-to-band (Landau-Zener) tunneling. In comparison to the ballistic case, we show that the phonon scattering shifts the onset of ambipolar conduction to more positive gate voltage (thereby increasing the off current). It is found that the subthreshold swing in ambipolar conduction can be made as steep as 40 mV/decade despite the effect of phonon scattering.
引用
收藏
页码：1 / 3
页数：3
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