Manifestations of induced instability of phase boundaries during thermomigration

被引：1

作者：

Knyazev, S. Yu. ^{[1
]}

Lozovskii, V. N. ^{[2
]}

Lozovskii, V. S. ^{[2
]}

Seredin, B. M. ^{[2
]}

机构：

[1] Don State Tech Univ, Rostov Na Donu 344000, Russia

[2] Platov South Russian State Polytech Univ NPI, Novocherkassk 346428, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2016年 / 42卷 / 10期

关键词：

SILICON;

D O I：

10.1134/S1063785016100230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A technique for detection of the theoretically predicted effect of transfer of a local disturbance from one phase boundary of a flat liquid zone to another during its thermomigration in a crystal is presented. The results of experimental studies of the peculiarities of an induced disturbance and its general effect on the stability of the flat zone are described. It is suggested to use the induced instability effect in silicon device structure engineering.

引用

页码：1045 / 1048

页数：4

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