Novel Porous Silicon Integrated Optical Devices for Sensing Applications

被引：0
|
作者：
Xia, Zhixuan [1 ]
Eftekhar, Ali Asghar [1 ]
Davis, Stanley C., Jr. [2 ]
Sandhage, Ken [2 ]
Adibi, Ali [1 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
来源：
2011 IEEE PHOTONICS CONFERENCE (PHO) | 2011年
关键词：
Porous silicon; Photonic integrated circuits; Sensors;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design, fabrication, and characterization of novel integrated optical sensors comprised of nanoporous silicon are presented. This work lays foundation for a new class of planar integrated photonic sensors with high sensitivity.
引用
收藏
页码：545 / +
页数：2
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