A Development Summarization of the Power Semiconductor Devices II

被引：13

作者：

Duan, Baoxing ^{[1
]}

Yang, Yintang ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian, Shaanxi, Peoples R China

来源：

IETE TECHNICAL REVIEW | 2012年 / 29卷 / 01期

关键词：

Breakdown voltage; Charge shielding; Electric field modulation; Silicon-on-insulator LDMOS; Specific on-resistance; ON-RESISTANCE; VOLTAGE; SOI; LDMOS;

D O I：

10.4103/0256-4602.93130

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For Silicon-on-Insulator (SOI) Lateral Double-diffused MOSFET (LDMOS), the new technologies, which apply the electric field modulation and charge shielding effects to design new kinds of SOI LDMOS, have been developed in this paper on the basis of several typical lateral high-voltage devices designed by the authors. The trade-off characteristic between the breakdown voltage and the on-resistance is improved further due to the optimized lateral and vertical electric field. Meanwhile, the merits and shortcomings of this new technology are pointed out compared with the conventional methods. This review is the second part for the development summarization of the power semiconductor devices.

引用

页码：36 / 43

页数：8

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