The phonon-assisted photon-drag effect in a two-dimensional semiconductor quantum-well structure

被引：4
|
作者：
Rodrigues, C [1 ]
Fonseca, ALA [1 ]
Agrello, DA [1 ]
Nunes, OAC [1 ]
机构：
[1] Univ Brasilia, Inst Phys, BR-70919970 Brasilia, DF, Brazil
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2001年 / 29卷 / 01期
关键词：
quantum wells; electronic states; heterostructures; phonons; electronic transport;
D O I：
10.1006/spmi.2000.0909
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The phonon-assisted photon-drag effect in a two-dimensional semiconductor quantum well structure is investigated. By making use of second-order perturbation theory and the classical Boltzmann equation we found, by considering both intrasubband and the intersubband electronic transitions, that the electric field generated by the photon-drag effect in a typical GaAs-AlGaAs two-dimensional system is enhanced by almost one order of magnitude as compared with that of a bulk system. Moreover, the results can qualitatively account for the observed absorption spectra due to intersubband electronic transitions occurring in GaAs quantum wells. (C) 2001 Academic Press.
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页码：33 / 42
页数：10
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