THz radiation from GaAs surfaces with metallic nano-dot arrays under optical excitation

被引：0

作者：

Kang, C. ^{[1
]}

Yoo, H. K. ^{[1
]}

Lee, J. W. ^{[1
]}

Kim, B. H. ^{[1
]}

Kee, C. -S ^{[1
]}

Jung, H. -S. ^{[2
]}

Jung, G. -Y. ^{[2
]}

机构：

[1] GIST, Adv Photon Res Inst, Kwangju 500712, South Korea

[2] GIST, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010) | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present characteristics of THz radiation from GaAs wafers with metallic nano-dot arrays under optical excitation. Periodic arrays of metallic nano-dots were introduced by a nano-imprinting technique. We found that the metallic nano-dot arrays can make the bandwidth of THz radiation from GaAs surfaces narrow.

引用

页数：1

共 27 条

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