FIRST-PRINCIPLES MODELING OF BIPOLAR RESISTIVE SWITCHING IN METAL-OXIDE BASED MEMORY

被引：0
|
作者：
Makarov, Alexander [1 ]
Weinbub, Josef [1 ]
Sverdlov, Viktor [1 ]
Selberherr, Siegfried [1 ]
机构：
[1] Vienna Univ Technol, Inst Microelect, A-1040 Vienna, Austria
来源：
EUROPEAN SIMULATION AND MODELLING CONFERENCE 2010 | 2010年
关键词：
RRAM; resistive switching mechanism; stochastic model; Monte Carlo method; CURRENT-VOLTAGE CHARACTERISTICS; RESISTANCE;
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
A microscopic model of the resistive switching mechanism in bipolar metal-oxide based resistive random access memory (RRAM) is presented. The distribution of electron occupation probabilities obtained is in agreement with previous work. In particular, a low occupation region is formed near the cathode. A hysteresis cycle of RRAM switching simulated with the model including the ion dynamics is in good agreement with experimental results.
引用
收藏
页码：181 / 186
页数：6
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