Spin-dependent holed delocalization enhancement by bandfilling effects in degenerate asymmetric double quantum wells

被引:0
|
作者
Kemerink, M
Koenraad, PM
Wolter, JH
Christianen, PCM
Geim, AK
Parlangeli, A
Maan, JC
Henini, M
机构
[1] CATHOLIC UNIV NIJMEGEN,HIGH FIELD MAGNET LAB,INST MAT RES,NL-6525 ED NIJMEGEN,NETHERLANDS
[2] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND
关键词
bandstructure; GaAs/A1(x)Ga(1-x)As; double quantum well;
D O I
10.1006/spmi.1996.0185
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We studied the wavefunctions and energy positions of the confined states in the valance band in an asymmetric double quantum well. We found these to be extremely sensitive to both the carrier density and the height of the confining barriers, which allows us to control the so-called 'Spin Dependent Hole Delocalization'. The theoretical results are shown to be in excellent agreement with experiments. (C) 1997 Academic Press Limited
引用
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页码:217 / 222
页数:6
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