Silicon/2D-materials Photonic Integrated Devices

被引：0

作者：

Dai, Daoxin ^{[1
]}

Li, Jiang ^{[1
]}

Yin, Yanlong ^{[1
]}

Guo, Jingshu ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Modern Opt Instrumentat, Ctr Opt & Electromagnet Res, Hangzhou 310058, Zhejiang, Peoples R China

来源：

2019 18TH INTERNATIONAL CONFERENCE ON OPTICAL COMMUNICATIONS AND NETWORKS (ICOCN) | 2019年

关键词：

silicon photonics; 2D materials; thermal optic; photodetector; GRAPHENE PHOTONICS;

D O I：

10.1109/icocn.2019.8934074

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

Silicon photonics has attracted much attention because of the CMOS compatibility, high integrated density, etc. However, silicon is not a good option for active photonic integrated devices due to its indirect-bandgap structure. Recently, two-dimensional (2D) materials, such as graphene and black phosphorus (BP), exhibit excellent optical and electronic properties, and thus provide a potential option for realizing active photonic integrated devices on silicon. In this paper, we present our recent works on silicon/2D-materials photonic integrated devices for photodetection and thermal-tuning.

引用

页数：3

共 50 条

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