Carrier Dynamics in InAs/GaAs Quantum Rings

被引：0
|
作者：
Lin, C. H. [1 ,2 ]
Ling, H. S. [3 ]
Sun, K. W. [1 ,2 ]
Lee, C. P. [3 ]
Lin, S. D. [3 ]
Liu, Y. K. [4 ]
Yang, M. D. [4 ]
Shen, J. L. [4 ]
机构：
[1] Natl Chiao Tung Univ, Dept Appl Chem, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Inst Mol Sci, Hsinchu 30010, Taiwan
[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan
[4] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan
来源：
JOURNAL OF SCIENTIFIC CONFERENCE PROCEEDINGS, VOL 1, NOS. 2 AND 3 | 2009年 / 1卷 / 2-3期
关键词：
Time-Resolved Photoluminescence; Quantum Rings; Quantum Dots; DOTS; CAPTURE;
D O I：
10.1166/jcp.2009.1060
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have investigated the temperature dependence of the carrier relaxation dynamics in InAs/GaAs self-assembled quantum rings by using the time-resolved photoluminescence technique with a time resolution of similar to 250 ps. The carrier relaxation in the QRs not only shows strong dependence on the lattice temperature, it is also significant slower than the carrier relaxation in the quantum dots at temperature above 150 K.
引用
收藏
页码：100 / +
页数：2
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