Static and Dynamic Control of Limiting Threshold in Plasma-based Microstrip Microwave Power Limiter

被引：0
|
作者：
Simon, A. [1 ,2 ]
Pascaud, R. [1 ]
Callegari, T. [2 ]
Liard, L. [2 ]
Pascal, O. [2 ]
Pigaglio, O. [2 ]
机构：
[1] Univ Toulouse, ISAE, DEOS, F-31400 Toulouse, France
[2] Univ Toulouse, CNRS, UPS, INP,LAPLACE, F-31400 Toulouse, France
来源：
2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2017年
关键词：
microwave limiters; radio frequency (RF) tunability; plasma devices; gas discharge devices;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Static and dynamic control of the limiting threshold in a very low-loss plasma-based microstrip power limiter is investigated in order to prevent receivers from being threatened by high-power microwave (HPM). An analytic model of the microstrip circuit is proposed to derive the influence of its design on the limiting threshold of the microwave power limiter. Experimental results are in good agreement with those expected. Finally, an original approach to allow discrete limiting threshold tunability is presented and validated experimentally.
引用
收藏
页码：1987 / 1990
页数：4
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