Nearly Ideal Two-Dimensional Electron Gas Hosted by Multiple Quantized Kronig-Penney States Observed in Few-Layer InSe

被引:3
|
作者
Wang, Yu [1 ,2 ]
Gao, Qian [3 ]
Li, Wenhui [1 ,2 ]
Cheng, Peng [1 ,2 ]
Zhang, Yi-Qi [1 ,2 ]
Feng, Baojie [1 ,2 ]
Hu, Zhenpeng [3 ]
Wu, Kehui [1 ,2 ,4 ]
Chen, Lan [1 ,2 ,4 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100190, Peoples R China
[3] Nankai Univ, Sch Phys, Tianjin 300071, Peoples R China
[4] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
two-dimensional electron gas; Kronig-Penney model; indium selenide; scanning tunneling spectroscopy; density functional theory; TOTAL-ENERGY CALCULATIONS; QUANTUM; SURFACE; MOBILITY; EIGENFUNCTIONS; TRANSISTORS; ALGAN/GAN; TRANSPORT;
D O I
10.1021/acsnano.2c05556
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A theoretical ideal two-dimensional electron gas (2DEG) was characterized by a flat density of states independent of energy. Compared with conventional twodimensional free-electron systems in semiconductor heterojunctions and noble metal surfaces, we report here the achievement of ideal 2DEG with multiple quantized states in few-layer InSe films. The multiple quantum well states (QWSs) in few-layer InSe films are found, and the number of QWSs is strictly equal to the number of atomic layers. The multiple stair like DOS as well as multiple bands with parabolic dispersion both characterize ideal 2DEG features in these QWSs. Density functional theory calculations and numerical simulations based on quasi-bounded square potential wells described as the Kronig-Penney model provide a consistent explanation of 2DEG in the QWSs. Our work demonstrates that 2D van der Waals materials are ideal systems for realizing 2DEG hosted by multiple quantized Kronig-Penney states, and the semiconducting nature of the material provides a better chance for construction of high-performance electronic devices utilizing these states, for example, superlattice devices with negative differential resistance.
引用
收藏
页码:13014 / 13021
页数:8
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