Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components

III-V ternary alloy quantum-wells have become a hot topic in recent years. Especially, GaAs/GaAsSb quantum wells have attracted increasing attention due to their numerous applications in the field of near-infrared optoelectronic devices. With the further reduction of dimensions, GaAs/GaAsSb nanowires show many special properties compared to their quantum well structures. In this work, GaAs/GaAs1-xSbx/GaAs coaxial single quantum-well nanowires with different Sb composition were grown by molecular beam epitaxy. The band structure and the optical properties were investigated through power-dependent and temperature-dependent photoluminescence measurement. It has been found that a deeper quantum well is created with the increase of Sb component. Thanks to the deeper quantum well, more effective electron confinement has been realized, the emission from the sample can still be detected up to room temperature. The different trend of peak position and shape at various temperatures also supports the improved temperature stability of the samples. These results will be beneficial for the design of alloy quantum wells, and will facilitate the development of alloy quantum-well based devices.