Two-way silicon-neuron interface by electrical induction

被引：40
|
作者：
Stett, A
Muller, B
Fromherz, P
机构：
[1] MAX PLANCK INST BIOCHEM,DEPT MEMBRANE & NEUROPHYS,D-82152 MARTINSRIED,GERMANY
[2] TECH UNIV BERLIN,INST MICROELECT,D-10623 BERLIN,GERMANY
来源：
PHYSICAL REVIEW E | 1997年 / 55卷 / 02期
关键词：
D O I：
10.1103/PhysRevE.55.1779
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
A nerve cell is placed onto a combined silicon microstructure of an insulated spot of doped silicon and an insulated-gate field-effect transistor. Voltage pulses are applied to the insulated spot. They elicit neural activity which in turn modulates the transistor. The bidirectional interface between the ionics of neurons and the electronics of silicon is based on electrical induction mediated by an electrochemically safe interface.
引用
收藏
页码：1779 / 1782
页数：4
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