A 128Gb (MLC)/192Gb (TLC) Single-Gate Vertical Channel (SGVC) Architecture 3D NAND using only 16 Layers with Robust Read Disturb, Long-Retention and Excellent Scaling Capability

被引：0

作者：

Lue, Hang-Ting ^{[1
]}

Du, Pei-Ying ^{[1
]}

Chen, Wei-Chen ^{[1
]}

Lee, Yung-Chun ^{[1
]}

Hsu, Tzu-Hsuan ^{[1
]}

Yeh, Teng-Hao ^{[1
]}

Chang, Kuo-Pin ^{[1
]}

Hsieh, Chih-Chang ^{[1
]}

Huang, Chiatze ^{[1
]}

Lee, Guan-Ru ^{[1
]}

Chen, Chih-Ping ^{[1
]}

Chen, Chieh-Fang ^{[1
]}

Chin, Chia-Jung ^{[1
]}

Chen, Y. J.

Lu, W. P.

Yang, Tahone

Chen, Kuang-Chao

Hung, Chun-Hsiung ^{[2
]}

Wang, Keh-Chung ^{[1
]}

Lu, Chih-Yuan ^{[1
]}

机构：

[1] Macronix Int Co Ltd, Emerging Cent Lab, 16 Li Hsin Rd,Hsinchu Sci Pk, Hsinchu, Taiwan

[2] Macronix Int Co Ltd, Design Ctr, 16 Li Hsin Rd,Hsinchu Sci Pk, Hsinchu, Taiwan

来源：

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully developed a 128Gb MLC (or 192Gb TLC) 3D NAND Flash using 16-layer SGVC architecture. The produced memory density is 1.6 Gb/mm(2) for MLC or 2.4 Gb/mm(2) for TLC (including CMOS peripheral area, spared BL's and blocks). Such memory density is comparable to 48-layer 3D NAND using the popular gate-all-around (GAA) structures. SGVC has the important advantage of much smaller cell size and pitch scaling capability which allows very high-density memory at much lower stacking layer number. SGVC possesses very robust read disturb immunity (>120M read) and long-retention (>40 years at room temperature) at fresh state that can suppress the very frequent wear-leveling and refresh operations needed for other 3D NAND Flash devices and is very suitable for read-intensive memory. With further stacking/scaling, it is possible to realize low-cost 1Tb single-chip solution at merely 48 layers.

引用

页数：4

共 1 条

[1] A Novel Double-density, Single-Gate Vertical Channel (SGVC) 3D NAND Flash That Is Tolerant to Deep Vertical Etching CD Variation and Possesses Robust Read-disturb Immunity
Lue, Hang-Ting
Hsu, Tzu-Hsuan
Wu, Chen-Jun
Chen, Wei-Chen
Yeh, Teng-Hao
Chang, Kuo-Pin
Hsieh, Chih-Chang
Du, Pei-Ying
Hsiao, Yi-Hsuan
Jiang, Yu-Wei
Lee, Guan-Ru
Lo, Roger
Su, Yan-Ru
Huang, Chiatze
Lai, Sheng-Chih
Liang, Li-Yang
Chen, Chieh-Fang
Hung, Min-Feng
Hu, Chih-Wei
Chiu, Chia-Jung
Lu, Chih-Yuan
2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2015,

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