Narrow Range of Hafnium Doping for Promoted Mechanical Properties and Critical Current Density (J c ) Values of Mg1-x Hf x B2 Superconductor

被引:5
|
作者
Elsabawy, Khaled M. [1 ,2 ]
机构
[1] Tanta Univ, Fac Sci, Dept Chem, Tanta 31725, Egypt
[2] Taif Univ, Fac Sci, Dept Chem, Taif City, Saudi Arabia
关键词
Doped MgB2; Diffusion mechanism; X-ray; SE-microscopy; Mechanical properties; T-C; MGB2; AL;
D O I
10.1007/s10948-011-1134-4
中图分类号
O59 [应用物理学];
学科分类号
摘要
Hafnium was used as a softener dopant to replace at magnesium sites of Mg1-x Hf (x) B-2 regime (where x=0.0, 0.05, 0.1, 0.2, and 0.4 mole). Samples were prepared via high temperature solid state reaction technique depending upon diffusion mechanism of Mg-vapor ions through hafnium-boron matrix. The maximum solubility limit of hafnium (n) was found to be similar to 0.22 mole. The crystalline lattice constants exhibit slight elongation in the case of the c-axis as x increases. Furthermore, the effect of Hf-doping on the microstructure properties of the MgB2 system was investigated carefully. The SE-microscopic analysis indicated that hafnium ions diffuse regularly through surface and bulk in case of (x=0.05-0.2 mole). The grain size was estimated and found to be between 0.33 and 1.34 mu m. The mechanical tensile strength of the samples was clearly improved linearly as Hf-content increased, recording the maximum tensile strength of 34.8 MPa for the sample with x=0.4 mole. A visualization of the Hf-doped MgB2 structure was constructed and investigated to confirm the success of hafnium substitutions at the Mg-sites of the MgB2 superconductor.
引用
收藏
页码:1853 / 1861
页数:9
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