Effects of insulator surface roughness on Al-alloy film properties and electromigration performance in Al-alloy Ti insulator layered interconnects

被引:11
|
作者
Onoda, H
Narita, T
Touchi, K
Hashimoto, K
机构
[1] VLSI Research and Development Center, Oki Electric Industry Co., Ltd, Hachioji, Tokyo 193
来源
关键词
D O I
10.1116/1.588999
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Effects of insulator surface roughness on the overlying aluminum alloy him properties and electromigration performance in Al alloy/Ti insulator layered interconnects have been investigated. Insulator surface roughness changes the roughness and crystallographic orientation of Al/Ti layered films formed on the insulator. In particular, the effect is prominent in the case of high-temperature sputtering of Al alloy films. A rough insulator surface deteriorates the roughness and crystallographic orientation of the Al alloy film formed on the insulator, while a smooth insulator surface improves those properties. The insulator surface roughness does not change the roughness and crystallographic orientation of the Al alloy film without a Ti underlayer. Ti roughness and crystallographic orientation are improved on a very smooth surface insulator resulting in improvement in the roughness and crystallographic orientation of the Al alloy him formed on the Ti layer. As a result, the electromigration performance in Al/Ti layered interconnects changes according to the underlayer insulator surface roughness. (C) 1996 American Vacuum Society.
引用
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页码:2645 / 2655
页数:11
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