InP-based 1.55 μm high-speed photodetectors for 80 Gbit/s systems and beyond

被引:0
|
作者
Beling, A [1 ]
Bach, HG [1 ]
Kunkel, R [1 ]
Mekonnen, GG [1 ]
Schmidt, D [1 ]
机构
[1] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, Fraunhofer Inst Telecommun, D-10587 Berlin, Germany
关键词
balanced detection; InP; integrated opto-electronic circuit; pin photodiode; travelling wave photodetector;
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The paper reviews the key characteristics of recent developments in the field of ultra fast photodetectors for 1.55 mu m wavelength. In detail, we report on a fully packaged highly efficient photodetector with 100 GHz bandwidth, suitable for 160 Gbit/s return-to-zero (RZ) detection. Furthermore, a monolithically integrated balanced photodetector is described, to be applied for direct detection of 80 Gbit/s differential phase shift keyed (DPSK) transmission formats. Achievements in the development of travelling wave photodetectors are summarized.
引用
收藏
页码:303 / 308
页数:6
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