Electronic structure and the nature of electronic states of amorphous silicon

被引：1
|
作者：
Biswas, P [1 ]
机构：
[1] Univ Utrecht, Debye Inst, NL-3584 CC Utrecht, Netherlands
来源：
PHYSICS LETTERS A | 2001年 / 282卷 / 4-5期
关键词：
D O I：
10.1016/S0375-9601(01)00205-5
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this Letter we present results of Monte Carlo simulation of a model of amorphous Si using an efficient tight-binding technique which gives high quality, reliable structure of amorphous Si. We present the structural and electronic properties of the model and study the nature of electronic states. The electronic states near the band edges have been found to be localized using participation numbers calculation. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：294 / 298
页数：5
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