Flexible MgO Barrier Magnetic Tunnel Junctions

被引：69

作者：

Loong, Li Ming ^{[1
]}

Lee, Wonho ^{[2
]}

Qiu, Xuepeng ^{[1
]}

Yang, Ping ^{[3
]}

Kawai, Hiroyo ^{[4
]}

Saeys, Mark ^{[5
]}

Ahn, Jong-Hyun ^{[2
]}

Yang, Hyunsoo ^{[1
]}

机构：

[1] Natl Univ Singapore, NUSNNI, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] Yonsei Univ, Sch Elect & Elect Engn, Seoul 03722, South Korea

[3] Natl Univ Singapore, Singapore Synchrotron Light Source, 5 Res Link, Singapore 117603, Singapore

[4] Inst Mat Res & Engn, 3 Res Link, Singapore 117602, Singapore

[5] Univ Ghent, Chem Technol Lab, Technol Pk 914, B-9052 Ghent, Belgium

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 25期

基金：

新加坡国家研究基金会;

关键词：

RANDOM-ACCESS MEMORY; ROOM-TEMPERATURE; EFFICIENT METHOD; STM IMAGES; THIN-FILM; MAGNETORESISTANCE; STRAIN; SIMULATION; DEVICES;

D O I：

10.1002/adma.201600062

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of approximate to 300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components.

引用

页码：4983 / 4990

页数：8

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