Low-frequency intensity noise in semiconductor lasers

被引:3
|
作者
Hall, MM
Carlsten, JL
机构
[1] Department of Physics, Montana State University, Bozeman, MT
来源
APPLIED OPTICS | 1996年 / 35卷 / 33期
关键词
D O I
10.1364/AO.35.006438
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The low-frequency intensity noise at 25 MHz of a Fabry-Perot semiconductor laser is measured as a function of injection current. All the measurements are taken at room temperature and the laser is operated with a commercial current source (the conditions under which laser diodes are often used). At the highest injection current of twice threshold, the intensity noise is 5.5 dB above the shot-noise limit. When the longitudinal side mode suppression of the laser is 20 dB or larger, the intensity noise is modeled adequately by an expression derived from the single-mode, small-signal, linearized, semiclassical rate equations. All the parameters used in the theory are derived or referenced. (C) 1996 Optical Society of America
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页码:6438 / 6444
页数:7
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