Optics characterization with a compact EUV spectrophotometer

被引：3
|
作者：
Blaschke, H. [1 ]
Balasa, I. [1 ]
Koch, L. [1 ]
Starke, K. [1 ]
Ristau, D. [1 ]
Wies, C. [2 ]
Lebert, R. [2 ]
Bayer, A. [3 ]
Barkusky, F. [3 ]
Mann, K. [3 ]
机构：
[1] Laser Zentrum Hannover eV, Hannover, Germany
[2] AIXUV Aachen, Aachen, Germany
[3] Laser Lab Gottingen eV, Gottingen, Germany
来源：
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXII, PTS 1 AND 2 | 2008年 / 6922卷 / 1-2期
关键词：
EUV; reflectometry; flat-field spectrograph; laser plasma source; cathode ray tube; multilayers; transmittance; reflectance;
D O I：
10.1117/12.772859
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
The development of a novel compact EUV spectrophotometer will be presented. The device is capable of measuring reflectance and transmittance spectra of medium scale EUV-optics primary in the spectral range from 12 nm to 21 nm. Based on a new polychromatic measurement principle, the system uses the direct irradiation of a table-top EUV-source for illuminating the sample and a broad-band spectrograph for detecting the probe and reference beam. Samples can be investigated under different angles of incidence and in respect of lateral dependencies. Typical results of reflectivity investigations of Mo/Si-mirrors and transmitting foils will be shown and compared with reference measurements of certified institutes and calculations.
引用
下载
收藏
页数：9
相关论文
共 50 条
  • [1] Novel compact spectrophotometer for EUV-optics characterization
    Starke, K.
    Blaschke, H.
    Jensen, L.
    Nevas, S.
    Ristau, D.
    Lebert, R.
    Wies, C.
    Bayer, A.
    Barkusky, F.
    Mann, K.
    ADVANCES IN X-RAY/EUV OPTICS, COMPONENTS, AND APPLICATIONS, 2006, 6317
  • [2] Characterization of optics and masks for the EUV lithography
    Paret, V
    Boher, P
    Geyl, R
    Vidal, B
    Putero-Vuaroqueaux, M
    Quesnel, E
    Robic, JY
    MICROELECTRONIC ENGINEERING, 2002, 61-2 : 145 - 155
  • [3] Compact EUV source and optics for direct structuring of surfaces
    Bayer, Armin
    Barkusky, Frank
    Peth, Christian
    Töttger, Holger
    Mann, Klaus
    PHOTON PROCESSING IN MICROELECTRONICS AND PHOTONICS VI, 2007, 6458
  • [4] Compact EUV source and optics for applications apart from lithography
    Bayer, Armin
    Barkusky, Frank
    Peth, Christian
    Toettger, Holger
    Mann, Klaus
    ADVANCES IN X-RAY/EUV OPTICS, COMPONENTS, AND APPLICATIONS, 2006, 6317
  • [5] Laser-induced EUV source for optics characterization
    Kranzusch, S
    Mann, K
    EMERGING LITHOGRAPHIC TECHNOLOGIES V, 2001, 4343 : 559 - 565
  • [6] Beamline for measurement and characterization of multilayer optics for EUV lithography
    Underwood, JH
    Gullikson, EM
    EMERGING LITHOGRAPHIC TECHNOLOGIES II, 1998, 3331 : 52 - 61
  • [7] CONSTRUCTION, CALIBRATION, AND APPLICATION OF A COMPACT SPECTROPHOTOMETER FOR EUV (300-A 2500-A) PLASMA DIAGNOSTICS
    MOOS, HW
    CHEN, KI
    TERRY, JL
    FASTIE, WG
    APPLIED OPTICS, 1979, 18 (08): : 1209 - 1216
  • [8] Characterization of EUV optics contamination due to photoresist related outgassing
    Pollentier, I.
    Goethals, A-M.
    Gronheid, R.
    Steinhoff, J.
    Van Dijk, J.
    EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY, 2010, 7636
  • [9] Characterization of the measurement uncertainty of a laboratory EUV reflectometer for large optics
    Scholze, Frank
    Boettger, Thomas
    Enkisch, Hartmut
    Laubis, Christian
    van Loyen, Ludwig
    Macco, Fritz
    Schaedlich, Stefan
    MEASUREMENT SCIENCE AND TECHNOLOGY, 2007, 18 (01) : 126 - 130
  • [10] EUV multilayer optics
    Gautier, J.
    Delmotte, F.
    Bridou, F.
    Rouillay, M.
    Varniere, F.
    de Rossi, S.
    Jerome, A.
    Ravet, M. F.
    JOURNAL DE PHYSIQUE IV, 2006, 138 : 237 - 244
12345