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The missing memristor found
被引:8786
|作者:
Strukov, Dmitri B.
[1
]
Snider, Gregory S.
[1
]
Stewart, Duncan R.
[1
]
Williams, R. Stanley
[1
]
机构:
[1] HP Labs, Palo Alto, CA 94304 USA
来源:
关键词:
D O I:
10.1038/nature06932
中图分类号:
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号:
07 ;
0710 ;
09 ;
摘要:
Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor ( short for memory resistor)(1). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid- state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current - voltage behaviour observed in many nanoscale electronic devices(2-19) that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross- point switches(20-22).
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页码:80 / 83
页数:4
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