The missing memristor found

被引:8786
|
作者
Strukov, Dmitri B. [1 ]
Snider, Gregory S. [1 ]
Stewart, Duncan R. [1 ]
Williams, R. Stanley [1 ]
机构
[1] HP Labs, Palo Alto, CA 94304 USA
关键词
D O I
10.1038/nature06932
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor ( short for memory resistor)(1). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid- state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current - voltage behaviour observed in many nanoscale electronic devices(2-19) that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross- point switches(20-22).
引用
收藏
页码:80 / 83
页数:4
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