WTe2/FeS2 nanocomposite thin films: Structural, compositional, temperature-dependent photodetection studies

被引:2
|
作者
Chauhan, Ishant [1 ]
Kaur, Manjot [1 ]
Singh, Kulwinder [2 ,3 ]
Sharma, Ram K. [4 ]
Kumar, Manjeet [5 ]
Yun, Ju-Hyung [5 ]
Kumar, Akshay [1 ,6 ]
机构
[1] Sri Guru Granth Sahib World Univ, Dept Nanotechnol, Adv Funct Mat Lab, Fatehgarh Sahib 140406, Punjab, India
[2] Chandigarh Univ, Univ Ctr Res & Dev, Mohali 140413, Punjab, India
[3] Chandigarh Univ, Univ Inst Sci, Dept Chem, Mohali 140413, Punjab, India
[4] Univ Petr & Energy Studies UPES, Dept Ctr Interdisciplinary Res, Dehra Dun 248007, Uttaranchal, India
[5] Incheon Natl Univ, Dept Elect Engn, Incheon 406772, South Korea
[6] Sardar Patel Univ, Dept Phys, Mandi 175001, Himachal Prades, India
关键词
WTe2/FeS2 thin film; Transport mechanism; Photoconductivity; On-off cycles; Responsivity; IRON DISULFIDE FES2; ANODE MATERIAL; DOPED ZNO; PYRITE; TRANSPORT; REMOVAL;
D O I
10.1016/j.mssp.2022.107039
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Present work reports the structural, morphological, compositional, photodetection, and temperature-dependent electrical characteristics of WTe2/FeS(2 )nanocomposite. In different temperature regions (170-318 K), different conductivity models have been fitted to determine charge transport mechanism. The temperature-dependent conductive behavior of thin film revealed that thermally activated transport mechanism is dominant at high temperatures. However, Mott's variable range hopping (VRH) transport mechanism shows dominance at lower temperatures. Furthermore, two different methods were used to illustrate the photoconductive nature of fabricated device. First method involves the determination of electrical characteristics under dark and light conditions at various temperatures. Later part comprises the photoelectrical properties of the fabricated device at different light wavelengths under room temperature conditions. Photoelectrical results showed fabricated device possess 1.628 A/W and 22.4 x 10(13 )Jones responsivity and detectivity under illumination with a light source (455 nm).
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页数:7
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