The specular Andreev reflection and spin-valley resolved conductance in the ferromagnet-superconductor silicene junction

We investigate the specular Andreev reflection and spin-valley resolved conductance of electrons in the ferromagnet-superconductor silicene junction. Our study is based on the tunnelling Hamiltonian and Blonder-Tinkham-Klapwijk theory. First, we acquire the probabilities of Andreev reflection and normal reflection as a function of incident angle and bias voltage. These results show that the Andreev reflection occurs only for the bias voltage, which is smaller than the superconducting gap, and the Andreev reflection processes can be efficiently controlled via a local electric field and ferromagnetic exchange field. Next, we demonstrate the electric field and exchange field-dependent charge conductance, we show that the charge conductance can be suppressed for electric field away from the critical value and enhanced doubly by increasing the exchange field, enabling controllable electronic switching. In particular, one full spin and valley polarized conductance can be achieved in this junction. Our findings reveal the potential of silicene for spin-valleytronic applications.