Structural analysis of InAs quantum dashes grown on InP substrate by scanning transmission electron microscopy

被引：0
|
作者：
Sauerwald, A [1 ]
Kümmell, T [1 ]
Bacher, G [1 ]
Somers, A [1 ]
Schwertberger, R [1 ]
Reithmaier, JP [1 ]
Forchel, A [1 ]
机构：
[1] Univ Duisburg Gesamthsch, D-47057 Duisburg, Germany
来源：
Physics of Semiconductors, Pts A and B | 2005年 / 772卷
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We applied plan-view and cross-sectional Scanning Transmission Electron Microscopy (STEM) for studying InAs quantum dashes embedded between In0.53Ga0.23Al0.24As barriers grown on InP substrate. Chemically sensitive Z-contrast micrographs give direct access to the chemical composition of the samples, showing triangular-shaped cross-sections of the quantum dashes. The sizes of the quantum dashes depend on the nominal InAs layer thickness.
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页码：591 / 592
页数：2
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