Dispersion on all-optical logic XOR gate using semiconductor optical amplifier

被引:15
|
作者
Kotb, Amer [1 ]
Alamer, Fahad Alhashmi [2 ]
机构
[1] Fayoum Univ, Fac Sci, Dept Phys, Al Fayyum 63514, Egypt
[2] Umm Al Qura Univ, Fac Sci Appl, Dept Phys, Mecca 24382, Saudi Arabia
关键词
Simulation; Dispersion; XOR gate; Semiconductor optical amplifier; Mach-Zehnder interferometer; MACH-ZEHNDER INTERFEROMETER; 2-PHOTON ABSORPTION; NAND GATE; SOA; MODULATION; DESIGN; NOR;
D O I
10.1007/s11082-016-0600-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effect of dispersion on an all-optical logic XOR gate is simulated and investigated. This Boolean function is realized by using semiconductor optical amplifiers-based Mach-Zehnder interferometer (SOAs-MZI). The dependence of the output quality factor (Q-factor) on input pulse energy, pulse width, SOA's carrier lifetime, linewidth enhancement factor (a-factor) and saturation power has been examined and assessed. The obtained results confirm that the XOR gate implemented with the proposed scheme is capable of operating at a data rate of 80 Gb/s with logical correctness and high output Q-factor.
引用
收藏
页数:10
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