Integrated Photonic Platform for Rare-Earth Ions in Thin Film Lithium Niobate

被引:70
|
作者
Dutta, Subhojit [1 ,2 ]
Goldschmidt, Elizabeth A. [3 ]
Barik, Sabyasachi [1 ,2 ]
Saha, Uday [1 ,2 ]
Waks, Edo [1 ,2 ]
机构
[1] Univ Maryland, Inst Res Elect & Appl Phys, Dept Elect & Comp Engn, College Pk, MD 20742 USA
[2] Univ Maryland, Joint Quantum Inst, College Pk, MD 20742 USA
[3] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
基金
美国国家科学基金会;
关键词
Rare-earth ions; thin film lithium niobate; integrated photonics; spectral hole burning quantum information processing; optical signal processing; DOPED SILICON-NITRIDE; QUANTUM; MEMORY;
D O I
10.1021/acs.nanolett.9b04679
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Rare-earth ion ensembles doped in single crystals are a promising materials system with widespread applications in optical signal processing, lasing, and quantum information processing. Incorporating rare-earth ions into integrated photonic devices could enable compact lasers and modulators, as well as on-chip optical quantum memories for classical and quantum optical applications. To this end, a thin film single crystalline wafer structure that is compatible with planar fabrication of integrated photonic devices would be highly desirable. However, incorporating rare-earth ions into a thin film form-factor while preserving their optical properties has proven challenging. We demonstrate an integrated photonic platform for rare-earth ions doped in a single crystalline thin film lithium niobate on insulator. The thin film is composed of lithium niobate doped with Tm3+. The ions in the thin film exhibit optical lifetimes identical to those measured in bulk crystals. We show narrow spectral holes in a thin film waveguide that require up to 2 orders of magnitude lower power to generate than previously reported bulk waveguides. Our results pave the way for scalable on-chip lasers, optical signal processing devices, and integrated optical quantum memories.
引用
收藏
页码:741 / 747
页数:7
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