Development of Adhesive Wafer Bonding Technology

被引：3
|
作者：
Fomichev, Michael Yu [1 ]
Makhiboroda, Maksim A. [1 ]
Djuzhev, Nikolay A. [1 ]
Dedkova, Anna A. [1 ]
Gusev, Evgeney E. [1 ]
机构：
[1] Natl Res Univ Elect Technol MIET, Moscow, Russia
来源：
PROCEEDINGS OF THE 2021 IEEE CONFERENCE OF RUSSIAN YOUNG RESEARCHERS IN ELECTRICAL AND ELECTRONIC ENGINEERING (ELCONRUS) | 2021年
关键词：
temporary bonding; release material; debonding; TSV; MEMS; nanoelectronics; wafer deflection; 3D integration;
D O I：
10.1109/ElConRus51938.2021.9396080
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper shows the result of working out the operations of permanent bonding of Si-Si wafers and temporary bonding of Si-quartz wafers. The equipment was selected for the process of applying a thin-film material to increase the uniformity of the thickness of the adhesive, anti-adhesive, and photoresist layers. Also, the effects of flowing applied fluids to the back of the wafer are eliminated. The dependence of the thickness of the adhesive, anti-adhesive, and photoresist layers on the speed of rotation of the centrifuge was experimentally determined. It was compared with material developers' data. The curvature of the assembly does not exceed 10 mu m after permanent bonding of Si-Si wafers with a diameter of 150 mu m and a thickness of 675 mu m. In the process of temporary bonding, the thickness of the device Si wafer after thinning was 93 +/- 3 pm. The deflection of the thinned assembly does not exceed 30 mu m.
引用
收藏
页码：2558 / 2562
页数：5
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