DESIGN AND CHARACTERIZATION OF AN ALN PIEZOELECTRIC MEMS MAGNETOMETER

被引：0

作者：

Tang, Ken-Wei ^{[1
]}

Cheng, Po-Chih ^{[1
]}

Trivedi, Shyam ^{[1
]}

Li, Sheng-Shian ^{[1
,2
]}

机构：

[1] Natl Tsing Hua Univ, Inst NanoEngn & MicroSyst, Hsinchu, Taiwan

[2] Natl Tsing Hua Univ, Dept Power Mech Engn, Hsinchu, Taiwan

来源：

2021 21ST INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS) | 2021年

关键词：

AlN; Lorentz force; Magnetometer; MEMS; Microfabrication; Piezoelectric; Resonator; TPoS;

D O I：

10.1109/TRANSDUCERS50396.2021.9495675

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents an in-house design, fabrication, and characterization of a resonant piezoelectric MEMS device using the Thin-film Piezoelectric-on-Silicon (TPoS) process of AlN to realize a Lorentz force-based magnetic sensor. The magnetometer is designed by employing the flapping-mode of the rectangular resonator fixed at the center of the two opposite edges. The resonator is characterized by Laser Doppler Vibrometer and electrical measurements which show a resonance frequency of 356 kHz with Q of 767 in air. The output voltage of the magnetometer shows a linear increase with magnetic field strength indicating sensitivity and responsivity of 79.28 mV/T and 2128 ppm/T respectively. The frequency response of the device also shows a phase inversion upon reversing the direction of the magnetic field. The measured instability in the magnetic field was 0.283 mu T extracted from Allan deviation, to the best our knowledge the lowest value among state-of-the-art AlN MEMS magnetometers.

引用

页码：414 / 417

页数：4

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