An application of Open-Loop Active Gate Voltage Control for GaN Transistors

被引：0

作者：

Beye, M. L. ^{[1
,2
]}

Mogniotte, J. F. ^{[3
]}

Phung, L., V ^{[1
]}

Idir, N. ^{[4
]}

Maher, H. ^{[2
]}

Allard, B. ^{[1
]}

机构：

[1] Univ Lyon, INSA Lyon, Univ Claude Bernard, Ecole Cent Lyon,CNRS,Ampere, F-69621 Villeurbanne, France

[2] 3-2500 Boul Univ, Sherbrooke, PQ J1K 2R1, Canada

[3] Univ Lyon, INSA Lyon, ESTA Lab, CNRS,Ampere, F-69621 Villeurbanne, France

[4] Univ Lille, Arts & Metiers Paris Tech, Cent Lille, HEI,EA 2697,L2EP, F-59000 Lille, France

来源：

2019 21ST EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE '19 ECCE EUROPE) | 2019年

关键词：

HEMT GaN; gate voltage; Current switching speed; Voltage switching speed; active control; feasibility; DV/DT; PERFORMANCE; DI/DT; IGBT;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper presents the feasibility of an open loop control of Active Gate Voltage Control (AGVC) during turn-on and turn-off of GaN HEMTs in order to reduce the current or voltage switching speed. For the turn-on, two parameters (V-int, T-int) are used to reduce the current transient speed while for the turn-off three parameters (T-0, V-int0, T-int0) are used to adjust the voltage transient speed. The results show that the GaN HEMT can be controlled by the AGVC. However this technique is limited by the response time of the commercial gate drivers.

引用

页数：6

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