A unified model for unipolar resistive random access memory

被引：10
|
作者：
Lee, Kwangseok [1 ]
Jang, Jung-Shik [1 ]
Kwon, Yongwoo [2 ]
Lee, Keun-Ho [2 ]
Park, Young-Kwan [2 ]
Choi, Woo Young [1 ]
机构：
[1] Sogang Univ, Dept Elect Engn, Seoul 121742, South Korea
[2] Samsung Elect Co Ltd, Semicond R&D Ctr, Hwasung 445701, Gyunggi Do, South Korea
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 08期
基金：
新加坡国家研究基金会;
关键词：
NANOFILAMENTS; OXIDES;
D O I：
10.1063/1.3688944
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A unified model for resistive random access memory has been proposed for the accurate prediction of forming, reset, and set operations. Unlike conventional random circuit breaker network model, the unified model can simulate realistic cell structures with higher accuracy. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3688944]
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页数：3
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