Exciton states in three-dimensional ring structures - a differential-geometric analysis

被引：0
|
作者：
Willatzen, M. [1 ]
Lassen, B. [1 ]
机构：
[1] Univ So Denmark, Mads Clausen Inst, DK-6400 Sonderborg, Denmark
来源：
PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷
关键词：
excitons; quantum-dot rings; differential geometry;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An effective method for computing excitonic shifts in curved quantum-wire geometries is presented. As a case example, we consider a GaAs quantum ring with infinite barriers along the cross-sectional dimensions assumed to be of square shape albeit this assumption can be easily avoided. A simple analytic expression for excitonic shifts is found using first-order perturbation theory.
引用
收藏
页码：315 / 316
页数：2
相关论文
共 50 条
12345