Bandstructure and transport properties of 4H-and 6H-SiC:: Optically detected cyclotron resonance investigations

被引：1

作者：

Meyer, BK ^{[1
]}

Hofmann, DM

Volm, D

Chen, WM

Son, NT

Janzén, E

机构：

[1] Univ Giessen, Inst Phys 1, DE-35392 Giessen, Germany

[2] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

band structure; carrier scattering; cyclotron resonance; effective mass; SiC;

D O I：

10.4028/www.scientific.net/MSF.338-342.559

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present experimental data on the bandstructure and high mobility transport properties of 6H and 4H-SiC epitaxial films based on optically detected cyclotron resonance investigations. From the orientational dependence of the electron effective mass in 6H-SiC we obtain direct evidence for the camels back nature of the conduction band between the M- and L-points. The broadening of the resonance signal in 4H-SiC as a function of temperature is used to extract information on electron mobilities and to conclude on the role of the different scattering mechanisms.

引用

页码：559 / 562

页数：4

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