Resonant-cavity-enhanced avalanche photodiodes grown by molecular beam epitaxy on InP for detection near 1.55 μm

被引：9
|
作者：
Anselm, KA [1 ]
Nie, H [1 ]
Lenox, C [1 ]
Hansing, C [1 ]
Campbell, JC [1 ]
Streetman, BG [1 ]
机构：
[1] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 03期
关键词：
D O I：
10.1116/1.589959
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the epitaxial growth, fabrication, and characterization of a resonant-cavity-enhanced separate-absorption and multiplication avalanche photodiode capable of detecting light at 1.55 mu m. The device is grown by molecular beam epitaxy with In0.53GaxAl0.47-xAs layers lattice matched to InP. This detector has exhibited a peak external quantum efficiency greater than 70%, a gain of 8, and a dark current of only 50 nA at 90% of breakdown for a 100-mu m-diam diode. (C) 1998 American Vacuum Society.
引用
收藏
页码：1426 / 1429
页数：4
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