Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

被引：55

作者：

Uren, Michael J. ^{[1
]}

Caesar, Markus ^{[1
]}

Karboyan, Serge ^{[1
]}

Moens, Peter ^{[2
]}

Vanmeerbeek, Piet ^{[2
]}

Kuball, Martin ^{[1
]}

机构：

[1] Univ Bristol, Ctr Device Thermog & Reliabil, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[2] ON Semicond, B-9700 Oudenaarde, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

Field effect transistors; HEMTs; microwave transistors; power transistors; BUFFER LEAKAGE;

D O I：

10.1109/LED.2015.2442293

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown by simulation supported by experiment that a reduced surface field effect, associated with compensated deep acceptors, can occur in carbon doped GaN-on-Si power switching AlGaN/GaN transistors, provided there is a vertical leakage path from the 2DEG to the carbon-doped layer. Simulations show that this effect is not present in devices using iron-doped GaN buffers explaining the higher voltage capability of carbon-doped devices.

引用

页码：826 / 828

页数：3

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