Growth kinetics and relationship between structure and mechanical properties of a-C(N):H films deposited in acetylene-nitrogen atmospheres

被引:32
|
作者
Jacobsohn, LG
Freire, FL
Franceschini, DF
Lacerda, MM
Mariotto, G
机构
[1] Pontificia Univ Catolica Rio de Janeiro, Dept Fis, BR-22452970 Rio De Janeiro, Brazil
[2] Univ Fed Fluminense, Inst Fis, BR-24210340 Niteroi, RJ, Brazil
[3] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[4] Ist Nazl Fis Mat, I-38050 Trent, Italy
[5] Univ Trent, Dipartimento Fis, I-38050 Trent, Italy
来源
关键词
D O I
10.1116/1.581641
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Amorphous hydrogenated carbon-nitrogen films, a-C(N):H, were deposited by plasma enhanced chemical vapor deposition using acetylene-nitrogen mixtures. Film composition and density were determined by means of ion beam techniques being the him microstructure studied by infrared and Raman spectroscopies. Films were obtained with nitrogen content up to 22 at. %. As for films obtained using other gas mixtures, the deposition rate showed a strong decrease upon nitrogen incorporation, although with a smaller rate. The film growth kinetic is discussed and some specific features of acetylene-nitrogen precursor gas mixtures are pointed out. A remarkable decrease on the C atom sp(3) fraction was inferred for nitrogen contents higher than 10 at. %, and was correlated to the film density behavior. The mechanical hardness and internal stress were relatively insensitive to low nitrogen incorporation, with a systematic decreasing behavior for nitrogen contents above 10 at. %. (C) 1999 American Vacuum Society. [S0734-2101(99)05302-6].
引用
收藏
页码:545 / 551
页数:7
相关论文
共 50 条
  • [1] Film growth and relationship between microstructure and mechanical properties of a-C:H:F films deposited by PECVD
    Freire, FL
    da Costa, MEHM
    Jacobsohn, LG
    Franceschini, DF
    DIAMOND AND RELATED MATERIALS, 2001, 10 (02) : 125 - 131
  • [2] Dielectric properties of RF plasma-deposited a-C:H and a-C:H:N films
    Romanko, LA
    Gontar, AG
    Kutsay, AM
    Khandozko, SI
    Gorokhov, VY
    DIAMOND AND RELATED MATERIALS, 2000, 9 (3-6) : 801 - 804
  • [3] Growth conditions and mechanical properties of a-C:H films
    Northeastern University, Shenyang 110004, China
    Zhenkong Kexue yu Jishu Xuebao, 2008, 1 (64-66):
  • [4] Mechanical, electrical and optical properties of a-C:H:N films deposited by plasma CVD technique
    Chakrabarti, K.
    Basu, M.
    Chaudhuri, S.
    Pal, A.K.
    Hanzawa, H.
    Vacuum, 1999, 53 (03): : 405 - 413
  • [5] Mechanical, electrical and optical properties of a-C:H:N films deposited by plasma CVD technique
    Chakrabarti, K
    Basu, M
    Chaudhuri, S
    Pal, AK
    Hanzawa, H
    VACUUM, 1999, 53 (3-4) : 405 - 413
  • [6] Structure and properties of a-C:H films deposited onto polymeric substrates
    Prog. Engenharia Metalurgica M., COPPE, UFRJ, 21910-970 Rio de Janeiro, RJ, Brazil
    不详
    不详
    不详
    Diamond Relat. Mat., 5-7 (551-554):
  • [7] Structure and properties of a-C:H films deposited onto polymeric substrates
    Vasquez, S
    Achete, CA
    Borges, CP
    Franceschini, DF
    Freire, FL
    Zanghellini, E
    DIAMOND AND RELATED MATERIALS, 1997, 6 (5-7) : 551 - 554
  • [8] Plasma-deposited a-C(N):H films
    Franceschini, DF
    BRAZILIAN JOURNAL OF PHYSICS, 2000, 30 (03) : 517 - 526
  • [9] Effects of nitrogen incorporation on structure of a-C:H films deposited on polycarbonate by plasma CVD
    Cuong, NK
    Tahara, M
    Yamauchi, N
    Sone, T
    SURFACE & COATINGS TECHNOLOGY, 2005, 193 (1-3): : 283 - 287
  • [10] Structure and electrical properties of a-C:H thin films deposited by RF sputtering
    Yamazato, M.
    Mizuma, I.
    Higa, A.
    DIAMOND AND RELATED MATERIALS, 2010, 19 (7-9) : 695 - 698