Microfluidic Injector Simulation With FSAW Sensor for 3-D Integration

被引:8
|
作者
Thu Hang Bui [1 ,2 ]
Tung Bui Duc [2 ]
Trinh Chu Duc [2 ]
机构
[1] Delft Univ Technol, Delft Inst Microelect & Submicron Technol, NL-2628 CN Delft, Netherlands
[2] Vietnam Natl Univ, Univ Engn & Technol, Fac Elect & Telecommun, Dept MicroElectroMech Syst & Microsyst, Hanoi, Vietnam
关键词
Focused interdigital transducer (FIDT) device; level set method; liquid sensor; microfluidic injector; piezoelectric technology; surface acoustic wave (SAW) devices;
D O I
10.1109/TIM.2014.2366975
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a possible creation of the optimized liquid sensors for the inkjet nozzles. The proposed focused surface acoustic wave (FSAW) device utilizing aluminum nitride (AlN) single crystal as the piezoelectric substrate is based on the pressure variation due to the continuous droplet ejector. The design, specification, and numerical simulation results are described. Comparisons between the output response of the conventional and concentric structures indicate a more efficient operation of the multiple-segment focused interdigital transducer (FIDT) structure. According to the angular spectrum of the plane wave theory, the amplitude field of FIDTs is calculated through that of straight interdigital transducers. The 3-D integrated model of the FSAW device has a number of advantages, such as the enhancement of the surface displacement amplitudes and an easier fabrication. It is able to detect the breakup appearance of the liquid in the droplet formation process. For the piezoelectric substrate AlN, it is compatible with the CMOS fabrication technology, leading to an inexpensive and reliable system. Moreover, for the proposed FIDTs with multiple straight segments, the acoustic energy is more optimized and focused near the center of the inkjet nozzle. The droplet generation process begins at an output voltage of roughly 0.074 V within 0.25 mu s, and the background level of the attenuation of both the mechanical and electrical energy.
引用
收藏
页码:849 / 856
页数:8
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