Gamma radiation-enhanced thermal diffusion of iron ions into II-VI semiconductor crystals

被引：19
|
作者：
Martinez, Alan [1 ]
Williams, Lamario
Fedorov, Vladimir
Mirov, Sergey
机构：
[1] Univ Alabama Birmingham, Ctr Opt Sensors & Spect, Birmingham, AL 35294 USA
来源：
OPTICAL MATERIALS EXPRESS | 2015年 / 5卷 / 03期
基金：
美国国家科学基金会;
关键词：
SINGLE-CRYSTALS; BULK ZNSE;
D O I：
10.1364/OME.5.000558
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the effect of gamma-irradiation on the rate of post-growth thermal diffusion of iron into ZnSe and ZnS. Samples had thin films of iron deposited on one facet and were annealed at 950 degrees C for 14 days in the presence of gamma-radiation and diffusion lengths were compared to those of traditional post-growth thermal diffusion in the absence of gamma-irradiation. Samples of Fe:ZnSe and Fe:ZnS annealed under 44R/s gamma-irradiation showed increases in diffusion rate of 14% and 50%, respectively. (C)2015 Optical Society of America
引用
收藏
页码：558 / 565
页数：8
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