Epitaxial growth of CIGSe layers on GaP/Si(001) pseudo-substrate for tandem CIGSe/Si solar cells

被引：4
|
作者：
Barreau, Nicolas [1 ]
Durand, Olivier [2 ]
Bertin, Eugene [1 ,2 ]
Letoublon, Antoine [2 ]
Cornet, Charles [2 ]
Tsoulka, Polyxeni [1 ]
Gautron, Eric [1 ]
Lincot, Daniel [3 ]
机构：
[1] Univ Nantes, Inst Mat Jean Rouxel, UMR6502, CNRS, F-44000 Nantes, France
[2] Univ Rennes, Inst FOTON, CNRS, INSA Rennes,UMR 6082, F-35000 Rennes, France
[3] Inst Polytech Paris, CNRS, Inst Photovolta Ile France, Ecole Polytech,Chim Paristech PSL,UMR 9006, 18 Blvd Thomas Gobert, F-91120 Palaiseau, France
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2021年 / 233卷
关键词：
Molecular beam epitaxy; Epitaxial CIGSe; Gallium phosphide; Silicon; XRD structural Characterization; TEM; CU-POOR/RICH/POOR SEQUENCE; CU(IN; GA)SE-2; EFFICIENCY; DEFECTS; MODEL; GAP;
D O I：
10.1016/j.solmat.2021.111385
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this study, the epitaxial growth of co-evaporated Cu(In,Ga)Se2 films (CIGSe) onto GaP/Si(001) pseudosubstrates, where the GaP thin layer is epitaxially grown by Molecular Beam Epitaxy (MBE), is investigated. Extensive structural characterisation of epi-CIGSe is carried out via X-ray diffraction as well as transmission electron microscopy. Sturdy evidence of an epitaxial growth of CIGSe on (GaP/Si)(001) is observed, with the propagation of twins originating from the GaP/Si interface, through the CIGSe/GaP interface. This work aims at paving the way for future CIGSe/GaP/Si structures for the development of tandem solar cells with a c-Si bottom cell, and a GaP interfacial buffer layer for band edge engineering, allowing for the monolithic epitaxial growth of high quality CIGSe as a thin film top cell absorber.
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页数：9
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