Native Oxidation Growth on Ge(111) and (100) Surfaces

被引：59

作者：

Sahari, Siti Kudnie ^{[1
]}

Murakami, Hideki ^{[1
]}

Fujioka, Tomohiro ^{[1
]}

Bando, Tatsuya ^{[1
]}

Ohta, Akio ^{[1
]}

Makihara, Katsunori ^{[1
]}

Higashi, Seiichiro ^{[1
]}

Miyazaki, Seiichi ^{[1
]}

机构：

[1] Hiroshima Univ, Dept Semicond Elect & Integrat Sci, Grad Sch Adv Sci Matter, Hiroshima 7398530, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 04期

关键词：

RAY PHOTOELECTRON-SPECTROSCOPY; BY-LAYER OXIDATION; CHEMICAL-STABILITY; SULFUR PASSIVATION; SI(001) SURFACES; GE(100) SURFACE; OXIDE; HYDROGEN; TERMINATION; INTERFACES;

D O I：

10.1143/JJAP.50.04DA12

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the native oxide growth on Ge(100) and (111) surfaces treated by HCl and HF cleaning in clean room air by high-resolution X-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry (SE). The native oxidation of both HCl- and HF-last Ge(100) surfaces exhibited likely layer-by-layer fashion. The native oxide growth of the n-Ge(100) was significantly faster than the p-Ge(100) at the early stage of native oxidation. This can be explained by the formation of an O2- ion through free electron transfer from the Ge to the adsorbed O-2 molecules, which induces the surface electric field that can initiate the oxidation. In the case of different crystallographic orientations, the oxide rate of the Ge(100) surface was faster than that of the Ge(111) surface. This might be attributed to larger open space of the Ge(100) surface than that of the Ge(111) surface. (C) 2011 The Japan Society of Applied Physics

引用

页数：4

共 50 条

[1] Native oxidation growth on Ge(111) and (100) surfaces
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
不详
Jpn. J. Appl. Phys., 1600, 4 PART 2
[2] OXIDATION OF CE(100) AND GE(111) SURFACES - AN UPS AND XPS STUDY
PRABHAKARAN, K
OGINO, T
SURFACE SCIENCE, 1995, 325 (03) : 263 - 271
[3] Halogen interaction with the Ge(111) and Ge(100) surfaces
Gothelid, M
Le Lay, G
Wigren, C
Bjorkqvist, M
Karlsson, UO
SURFACE REVIEW AND LETTERS, 1998, 5 (01) : 119 - 124
[4] Chemisorption and reaction of dichlorosilane on Ge(100) and Ge(111) surfaces
Univ of California, Riverside, United States
Surf Sci, 2 (147-155):
[5] THE CHEMISORPTION AND REACTION OF DICHLOROSILANE ON GE(100) AND GE(111) SURFACES
DURBIN, TD
LAPIANOSMITH, DA
MCFEELY, FR
HIMPSEL, FJ
YARMOFF, JA
SURFACE SCIENCE, 1995, 330 (02) : 147 - 155
[6] OXIDATION OF CLEAN CLEAVED GE (111) SURFACES
WIENSKOWSKI, JV
FROITZHEIM, H
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 94 (02): : 429 - 435
[7] An X-ray photoelectron spectroscopy study of the HF etching of native oxides on Ge(111) and Ge(100) surfaces
Deegan, T
Hughes, G
APPLIED SURFACE SCIENCE, 1998, 123 : 66 - 70
[8] Contrasting growth modes of Mn on Ge(100) and Ge(111) surfaces: Subsurface segregation versus intermixing
Zhu, WG
Weitering, HH
Wang, EG
Kaxiras, E
Zhang, ZY
PHYSICAL REVIEW LETTERS, 2004, 93 (12) : 126102 - 1
[9] MODEL SEMICONDUCTOR SURFACES - ARSENIC TERMINATION OF THE GE(111), SI(111) AND SI(100) SURFACES
BRINGANS, RD
UHRBERG, RIG
OLMSTEAD, MA
BACHRACH, RZ
NORTHRUP, JE
PHYSICA SCRIPTA, 1987, T17 : 7 - 12
[10] COMPARATIVE-STUDY OF HYDROGEN ADSORPTION ON GE(100) AND GE(111) SURFACES
SURNEV, L
TIKHOV, M
SURFACE SCIENCE, 1984, 138 (01) : 40 - 50

← 1 2 3 4 5 →