Silicon-based optoelectronics

被引:0
|
作者
Buchal, C [1 ]
Loken, M [1 ]
Siegert, M [1 ]
机构
[1] Forschungszentrum Julich, Inst Schicht & Ionentech, ISIIT, D-52425 Julich, Germany
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The potential of silicon-based designs for Various optoelectronic functions is discussed. Si-based light detectors are the most advanced, especially in the form of metal-Si-metal (MSM) photodetectors. They use Si band to band absorption for visible light and Schottky-barrier emission for the infrared (IR). The different light sources show rapid progress, but still face challenges to reach a quantum efficiency of 10(-2). In addition to the intrinsic silicon based designs, some new Si breadboard concepts are shown: especially for waveguides, modulators and all-optical amplifiers, it may be advantageous to add entirely different materials (polymers, glasses, BaTiO(3) or Al(2)O(3)) Onto the Si wafer.
引用
收藏
页码:3 / 19
页数:17
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