Li conduction in sputtered amorphous Ta2O5

被引:14
|
作者
Frenning, G [1 ]
Engelmark, F [1 ]
Niklasson, GA [1 ]
Stromme, M [1 ]
机构
[1] Univ Uppsala, Angstrom Lab, Dept Mat Sci, S-75121 Uppsala, Sweden
关键词
D O I
10.1149/1.1359196
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Electron and Li ion conducting properties of room temperature sputtered amorphous tantalum oxide (a-Ta2O5) films were studied in order to evaluate the feasibility of using a-Ta2O5 in electrochromic device applications. The films were investigated using the galvanostatic intermittent titration technique, impedance spectroscopy, and isothermal transient ionic current measurements. It was found that the a-Ta2O5 met two out of three requirements posed on a Li ion conductor in a WO3 based electrochromic device. There was a negligible intercalation in the potential window used in WO3-based electrochromic devices (above 2.4-2.5 V vs. Li/Li+). Furthermore, in this potential region, the chemical diffusion coefficient for Li was larger than the corresponding quantity in WO3. However, there was a nonzero electron conductivity in the a-Ta2O5 films, not observed in the chemical vapor deposition-made beta -Ta2O5 investigated earlier. Still, the ionic conductivity was approximately one order of magnitude larger than the electronic one. (C) 2001 The Electrochemical Society.
引用
收藏
页码:A418 / A421
页数:4
相关论文
共 50 条
  • [1] Conduction mechanisms in amorphous and crystalline Ta2O5 thin films
    Ezhilvalavan, S
    Tseng, TY
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (09) : 4797 - 4801
  • [2] Dielectric and Li transport properties of electron conducting and non-conducting sputtered amorphous Ta2O5 films
    Frenning, G
    Nilsson, M
    Westlinder, J
    Niklasson, GA
    Mattsson, MS
    ELECTROCHIMICA ACTA, 2001, 46 (13-14) : 2041 - 2046
  • [3] CONDUCTION MECHANISMS IN SPUTTERED TA2O5 ON SI WITH AN INTERFACIAL SIO2 LAYER
    BANERJEE, S
    SHEN, B
    CHEN, I
    BOHLMAN, J
    BROWN, G
    DOERING, R
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) : 1140 - 1146
  • [4] Discrete β-Ta2O5 crystallite formation in reactively sputtered amorphous thin films
    Beckage, PJ
    Knorr, DB
    Wu, XM
    Lu, TM
    Rymaszewski, EJ
    JOURNAL OF MATERIALS SCIENCE, 1998, 33 (17) : 4375 - 4379
  • [5] Discrete β-Ta2O5 crystallite formation in reactively sputtered amorphous thin films
    P. J. Beckage
    D. B. Knorr
    X. M. Wu
    T.-M. Lu
    E. J. Rymaszewski
    Journal of Materials Science, 1998, 33 : 4375 - 4379
  • [6] Nonstoichiometry and mixed conduction in α-Ta2O5
    Choi, Gyeong M., 1700, (73):
  • [7] OPTICAL LOSSES OF SPUTTERED TA2O5 FILMS
    DUPARRE, A
    WELSCH, E
    WALTHER, HG
    KUHN, HJ
    SCHIRMER, G
    JOURNAL DE PHYSIQUE, 1987, 48 (07): : 1155 - 1159
  • [8] Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta2O5 on Si
    Atanassova, E
    Novkovski, N
    Paskaleva, A
    Pecovska-Gjorgjevich, M
    SOLID-STATE ELECTRONICS, 2002, 46 (11) : 1887 - 1898
  • [9] CONDUCTION MECHANISM OF TANTALUM OXIDE (TA2O5)
    BRAMBILLA, E
    PIACENTINI, GF
    ELETTROTECNICA, 1977, 64 (08): : 661 - 662
  • [10] ELECTRONIC AND IONIC-CONDUCTION IN TA2O5
    TULLER, HL
    MCHALE, AE
    AMERICAN CERAMIC SOCIETY BULLETIN, 1981, 60 (09): : 937 - 937