Comparison of BST Film Microwave Tunable Devices Based on (100) and (111) MgO Substrates

被引：5

作者：

Noda, Minoru ^{[1
]}

Yamada, Tomoaki ^{[2
]}

Seki, Kousuke

Kamo, Takafumi

Yamashita, Kaoru ^{[1
,3
]}

Funakubo, Horoshi ^{[4
,5
]}

Okuyama, Masanori ^{[6
]}

机构：

[1] Kyoto Inst Technol, Grad Sch Sci & Technol, Dept Elect, Kyoto 606, Japan

[2] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Global COE Program, Yokohama, Kanagawa 227, Japan

[3] Osaka Univ, Grad Sch Engn Sci, Dept Adv Elect & Opt Sci, Osaka, Japan

[4] Tokyo Inst Technol, Fac Engn, Dept Inorgan Mat, Yokohama, Kanagawa 227, Japan

[5] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Technol, Dept Innovat & Engn Mat, Yokohama, Kanagawa 227, Japan

[6] Osaka Univ, Grad Sch Engn Sci, Fac Engn Sci, Osaka, Japan

来源：

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | 2010年 / 57卷 / 10期

关键词：

STRONTIUM-TITANATE FILMS; THIN-FILMS;

D O I：

10.1109/TUFFC.2010.1681

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

We have increased the figure-of-merit (FOM) of a (Ba,Sr) TiO(3) (BST) film microwave tunable device by approximately three times for MgO(111) compared with a MgO(100) substrate at a frequency range of 20 GHz. Differences in permittivity and tunability in a BST film may be closely related to the difference in the film strain. The ratio of calculated permittivities of BST(100) and BST(111) films nearly corresponds to that of the FOM in the microwave range, which was rather unexpected because a higher permittivity leads to both larger tunability and dielectric loss in ferroelectrics. From a series of results, it is suggested that there are additional influences of orientation (other than the direct influence of strain itself) on the tunable properties in BST films especially in the high-frequency region.

引用

页码：2221 / 2227

页数：7

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