Improved performance of amorphous silicon thin film transistors by cyanide treatment

被引：4
|
作者：
Aiyer, HN
Nishioka, D
Matsuki, N
Shinno, H
Perera, VPS
Chikyow, T
Kobayashi, H
Koinuma, H
机构：
[1] Tokyo Inst Technol, Ceram Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 226, Japan
[2] Natl Res Inst Met, Tsukuba, Ibaraki 3050047, Japan
[3] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
[4] Osaka Univ, Res Ctr Photoenerget Organ Mat, Osaka 5670047, Japan
[5] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 06期
关键词：
D O I：
10.1063/1.1344230
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have examined the impact of a simple, wet chemical postgrowth treatment of "immersing in KCN solution" on the performance of inverted staggered amorphous silicon n-channel thin film transistors. Results show that the cyanide treatment significantly improves the overall transistor performance by the elimination of defect states. (C) 2001 American Institute of Physics.
引用
收藏
页码：751 / 753
页数：3
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