Epitaxial Graphene on Cu(111)

被引：660

作者：

Gao, Li ^{[1
]}

Guest, Jeffrey R. ^{[1
]}

Guisinger, Nathan P. ^{[1
]}

机构：

[1] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA

来源：

NANO LETTERS | 2010年 / 10卷 / 09期

关键词：

Graphene; Cu(111); scanning tunneling microscopy; COPPER; CARBON; GAS;

D O I：

10.1021/nl1016706

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The growth of graphene on single crystal Cu(111) has been achieved by thermal decomposition of ethylene in an ultrahigh vacuum chamber for the first time. The structural and electronic properties of graphene on Cu(111) have been investigated by scanning tunneling microscopy and spectroscopy. The nucleation of monolayer islands and two predominant domain orientations have been observed, which lead to the formation of numerous domain boundaries with increasing coverage. These results reveal that reducing the density of domain boundaries is one challenge of growing high-quality graphene on copper.

引用

页码：3512 / 3516

页数：5

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