RELIABILITY AND PERFORMANCE CHARACTERIZATION OF A MEMS-BASED NON-VOLATILE SWITCH

被引：0

作者：

Gaddi, Roberto ^{[1
]}

Schepens, Cor ^{[1
]}

Smith, Charles ^{[1
]}

Zambelli, Cristian ^{[2
]}

Chimenton, Andrea ^{[2
]}

Olivo, Piero ^{[2
]}

机构：

[1] Cavendish Kinet, Shertogenbosch, Netherlands

[2] Univ Ferrara, Dipartimento Ingn, Ferrara, Italy

来源：

2011 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2011年

关键词：

component; MEMS; CMOS; non-volatile memory; NVM; harsh environment;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we report data on the reliability and performance characterization of a CMOS-based non-volatile memory (NVM) array, the operating principle of which is based on stiction forces within a MEMS switch. Unlike any other NVM technology, the data retention of this technology improves with increasing temperatures. The switches have been proven to operate over an extremely wide temperature range from -150 degrees C to 300 degrees C, in a 4MRad/s radiation environment and can withstand acceleration forces up to 20,000g. The technology is an ideal candidate for highly reliable non-volatile memory in harsh environmental applications, like auto-motive, defense, space, down-well and geo-thermal. This NVM switch and a tunable RF-MEMS capacitor will be the first products based on this CMOS integrated MEMS platform.

引用

页数：6

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