Fully on-chip switched capacitor NMOS low dropout voltage regulator

被引：4

作者：

Camacho, Daniel ^{[1
]}

Gui, Ping ^{[1
]}

Moreira, Paulo ^{[2
]}

机构：

[1] So Methodist Univ, Dept Elect Engn, Dallas, TX 75275 USA

[2] CERN, Geneva, Switzerland

来源：

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2010年 / 65卷 / 01期

关键词：

Gate overdrive; Low dropout voltage (LDO) regulator; NMOS pass transistor; Voltage control;

D O I：

10.1007/s10470-009-9439-y

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a 1.5 V 50 mA low dropout voltage (LDO) regulator using an NMOS transistor as the output pass element. Continuous time,operation of the LDO is achieved using a new switched floating capacitor scheme that raises the gate voltage of the pass element. The regulator has a 0.2 V dropout at a 50 mA load and is stable for a wide load current range with loading capacitances up to 50 pF. The output variation when a full load step is applied is 300 mV and the recovery time is below 0.3 mu s. it is designed in a 0.13 mu m CMOS process with an area of 0.008 mm(2) and its operation does not require any external component.

引用

页码：141 / 149

页数：9

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