Flexible Field Emission from Thermally Welded Chemically Doped Graphene Thin Films

被引:32
|
作者
Jeong, Hee Jin [1 ]
Jeong, Hae Deuk [1 ]
Kim, Ho Young [1 ]
Kim, Sung Hun [1 ]
Kim, Jun Suk [1 ]
Jeong, Seung Yol [1 ]
Han, Joong Tark [1 ]
Lee, Geon-Woong [1 ]
机构
[1] Korea Electrotechnol Res Inst KERI, Nano Carbon Mat Res Grp, Chang Won 641120, South Korea
关键词
doping; field emission; flexible devices; graphene; thin films; LARGE-AREA; OXIDE-FILMS; CARBON; TRANSPARENT; REDUCTION; ELECTRODE; FABRICATION; GRAPHITE; DOPANTS;
D O I
10.1002/smll.201101696
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Flexible field-emission devices (FEDs) based on reduced graphene oxide (RGO) emitters are fabricated by the thermal welding of RGO thin films onto a polymeric substrate. The RGO edges are vertically aligned relative to the substrate as a result of cohesive failure in the RGO layer after thermal welding. Even at large bending angles, excellent electron emission properties, such as low turn-on and threshold fields, a high emission current density, a high field enhancement factor, and long-term stability of the emission properties of RGO emitters, arise from the uniform distribution and high density of the extremely sharp RGO edges, as well as the high interfacial strength between the RGO emitters and the substrate. Al- and Au-doped RGO emitters are fabricated by introducing a dopant solution to the RGO emitters, and the resulting field-emission characteristics are discussed. The proposed approach is straightforward and enables the practical use of high-performance RGO flexible FEDs.
引用
收藏
页码:272 / 280
页数:9
相关论文
共 50 条
  • [1] Field emission from graphene based composite thin films
    Eda, Goki
    Unalan, H. Emrah
    Rupesinghe, Nalin
    Amaratunga, Gehan A. J.
    Chhowalla, Manish
    APPLIED PHYSICS LETTERS, 2008, 93 (23)
  • [2] Flexible Field Emission of Nitrogen-Doped Carbon Nanotubes/Reduced Graphene Hybrid Films
    Lee, Duck Hyun
    Lee, Jin Ah
    Lee, Won Jong
    Kim, Sang Ouk
    SMALL, 2011, 7 (01) : 95 - 100
  • [3] Enhanced field emission from Si doped nanocrystalline AlN thin films
    Thapa, R.
    Saha, B.
    Chattopadhyay, K. K.
    APPLIED SURFACE SCIENCE, 2009, 255 (08) : 4536 - 4541
  • [4] Edge morphology effect on field emission properties of graphene thin films
    Gao, Yanlin
    Okada, Susumu
    CARBON, 2020, 157 : 33 - 39
  • [5] Field emission from thin liquid metal films
    Mitterauer, J
    APPLIED SURFACE SCIENCE, 1996, 94-5 : 161 - 170
  • [6] Tuning the Emission Energy of Chemically Doped Graphene Quantum Dots
    Noor-Ul-Ain
    Eriksson, Martin O.
    Schmidt, Susann
    Asghar, M.
    Lin, Pin-Cheng
    Holtz, Per Olof
    Syvajarvi, Mikael
    Yazdi, G. Reza
    NANOMATERIALS, 2016, 6 (11)
  • [7] Electron field emission from undoped and doped DLC films
    Litovchenko, VG
    Evtukh, AA
    Klyui, NI
    Litvin, YM
    Kudzinovsky, SY
    Chakhovskoi, AG
    Felter, TE
    FLAT-PANEL DISPLAYS AND SENSORS: PRINCIPLES, MATERIALS AND PROCESSES, 2000, 558 : 577 - 582
  • [8] Improved field emission from tungsten doped reduced graphene oxide
    Bhattacharya, Ranajoy
    Baek, In-Keun
    Barik, Ranjan Kumar
    Kim, Seontae
    Hong, Dongpyo
    Kwon, Ohjoon
    Sattorov, Matlabjon A.
    Park, Gun-Sik
    2017 EIGHTEENTH INTERNATIONAL VACUUM ELECTRONICS CONFERENCE (IVEC), 2017,
  • [9] Field emission from microstructured thin liquid metal films
    Mitterauer, J
    ISDEIV - XVIITH INTERNATIONAL SYMPOSIUM ON DISCHARGES AND ELECTRICAL INSULATION IN VACUUM, PROCEEDINGS, VOLS I AND II, 1996, : 737 - 741
  • [10] Field electron emission from carbon containing thin films
    Chen, J
    Wei, AX
    Zhang, HY
    Lu, Y
    Zheng, XG
    Mo, D
    Peng, SQ
    Xu, NS
    THIRD INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 1998, 3175 : 285 - 289